Digital Logic and Design MCQs with Answers
Practice important Digital Logic and Design MCQs with answers and explanations.
Chapter: 40
Q841:
How many transistors are used in a single DRAM memory cell?
A. 1
B. 2
C. 4
D. 6
Correct Answer:
A
Chapter: 40
Q842:
What is the advantage of using a single transistor in a DRAM cell?
A. Increases memory density
B. Increases speed
C. Reduces power consumption
D. Simplifies design
Correct Answer:
A
Chapter: 40
Q843:
What is the purpose of the MOSFET in a DRAM cell?
A. To increase storage capacity
B. To connect/disconnect the capacitor
C. To refresh the memory
D. To store data
Correct Answer:
B
Chapter: 40
Q844:
Why is address multiplexing used in DRAM?
A. To reduce the number of address lines
B. To increase memory speed
C. To reduce power consumption
D. To simplify the design
Correct Answer:
A
Chapter: 41
Q845:
What signal is activated to read data in a DRAM read cycle?
A. RAS
B. CAS
C. R/W
D. DOUT
Correct Answer:
C
Chapter: 41
Q846:
During the FAST Mode Page Access, which signal remains low throughout the page access?
A. RAS
B. CAS
C. R/W
D. DOUT
Correct Answer:
A
Chapter: 41
Q847:
What happens to the DOUT line when CAS goes high during the FAST Mode Page Access?
A. Data is latched
B. Data is disabled
C. Data is written
D. Data is refreshed
Correct Answer:
B
Chapter: 41
Q848:
Which type of DRAM allows the next column address to be accessed before the current data is latched?
A. Synchronous DRAM
B. Extended Data Output (EDO) DRAM
C. Fast Page Mode DRAM
D. Mask ROM
Correct Answer:
B
Chapter: 41
Q849:
What type of memory stores data permanently and does not allow write operations?
A. EPROM
B. Mask ROM
C. Flash Memory
D. EEPROM
Correct Answer:
B
Chapter: 41
Q850:
Which type of ROM can be programmed by the user but only once?
A. EPROM
B. Mask ROM
C. PROM
D. EEPROM
Correct Answer:
C
Chapter: 41
Q851:
How is data erased from a UV EPROM?
A. Electrically
B. Ultraviolet light
C. Magnetic fields
D. High voltage
Correct Answer:
B
Chapter: 41
Q852:
What is the function of a Mask ROM in memory storage?
A. Allows write operations
B. Stores data permanently
C. Provides volatile memory
D. Allows in-circuit programming
Correct Answer:
B
Chapter: 41
Q853:
In which type of ROM does the programming process use a fusible link?
A. Mask ROM
B. PROM
C. EPROM
D. EEPROM
Correct Answer:
B
Chapter: 41
Q854:
What is stored in a Flash memory cell to represent a logic 1?
A. Charge on floating gate
B. No charge on floating gate
C. Negative charge on control gate
D. Positive charge on control gate
Correct Answer:
B
Chapter: 41
Q855:
During which operation is charge added to the floating gate in Flash memory?
A. Programming Operation
B. Read Operation
C. Erase Operation
D. Latch Operation
Correct Answer:
A
Chapter: 41
Q856:
What is the purpose of the erase operation in Flash memory?
A. Add charge to the gate
B. Remove charge from the gate
C. Write new data
D. Disable the memory cell
Correct Answer:
B
Chapter: 41
Q857:
What type of DRAM has operations synchronized with the microprocessor's clock signal?
A. EDO DRAM
B. Synchronous DRAM
C. Fast Page Mode DRAM
D. EEPROM
Correct Answer:
B
Chapter: 41
Q858:
Which ROM type allows for data to be electrically erased and reprogrammed?
A. Mask ROM
B. PROM
C. EPROM
D. EEPROM
Correct Answer:
D
Chapter: 41
Q859:
The high density FLASH memory cell is implemented using ______________
A. 1 floating-gate MOS transistor
B. 2 floating-gate MOS transistors
C. 4 floating-gate MOS transistors
D. 6 floating-gate MOS transistors
Correct Answer:
A
Chapter: 41
Q860:
Which refresh mode suspends read/write operations during the refresh cycle in DRAM?
A. Burst Refresh Mode
B. Distributed Refresh Mode
C. RAS only Refresh
D. CAS before RAS Refresh
Correct Answer:
A