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Important Digital Logic and Design Short Questions

Chapter: 41
Question 1:
How does Extended Data Output (EDO) DRAM differ from Fast Page Mode DRAM?
Answer: EDO DRAM retains valid data on the DOUT line even when CAS is de-asserted, allowing quicker access to the next column without waiting for data latching.
Chapter: 41
Question 2:
What is a key characteristic of Synchronous DRAM?
Answer: Synchronous DRAM is synchronized with the clock signal of the microprocessor, allowing for more precise timing and faster access.
Chapter: 41
Question 3:
How does a Mask ROM store data?
Answer: Mask ROM stores data permanently during manufacturing using fixed connections in the storage cells, allowing read-only access.
Chapter: 41
Question 4:
What is the purpose of the fusible link in a PROM?
Answer: The fusible link in a PROM connects the transistor output to the column line; it can be blown to store a logic low, permanently programming the PROM.
Chapter: 41
Question 5:
What makes EPROM different from UV EPROM?
Answer: EPROM can be erased and reprogrammed electrically, while UV EPROM requires exposure to ultraviolet light for erasure.
Chapter: 41
Question 6:
How does EEPROM differ from other programmable ROM types?
Answer: EEPROM can be erased and reprogrammed electrically without removing it from the circuit, unlike other ROM types that require removal or special conditions.
Chapter: 41
Question 7:
What is a major advantage of FLASH memory over other types of memory?
Answer: FLASH memory has high density, read/write capability, non-volatility, and fast access time, integrating many desirable characteristics into one memory type.
Chapter: 41
Question 8:
What happens during the programming operation of FLASH memory?
Answer: During programming, a positive voltage is applied to the control gate to attract electrons to the floating gate, storing charge to represent data.
Chapter: 41
Question 9:
How is a logic '1' read from a FLASH memory cell?
Answer: A logic '1' is read if the positive voltage applied to the control gate is sufficient to turn on the transistor, indicating current flow from drain to source.
Chapter: 41
Question 10:
Describe the erase operation in FLASH memory.
Answer: During erasure, a large positive voltage is applied to the source, attracting electrons away from the floating gate and neutralizing the charge.