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Important Digital Logic and Design Short Questions

Chapter: 39
Question 1:
In a 16K x 8 memory, how many bytes can it store?
Answer: A 16K x 8 memory can store 16,384 bytes (16 x 1024).
Chapter: 40
Question 2:
What is the purpose of row and column decoders in large memory systems?
Answer: Row and column decoders split the input address into row and column addresses, which speeds up the decoding process and improves memory access by using smaller, faster decoders.
Chapter: 40
Question 3:
How does a row and column decoder system benefit large memory arrays compared to linear addressing?
Answer: It reduces the number of gates needed for decoding, resulting in faster decoding times and improved memory access compared to a linear addressing method which would require larger decoders.
Chapter: 40
Question 4:
What happens when the W (write) signal is active in a memory's input/output buffer?
Answer: When the W signal is active, the top AND gate is selected, enabling the data at the Data In/Out lines to be stored in the selected latches. The bottom AND gate is disabled in this scenario.
Chapter: 40
Question 5:
What is the role of the OE (output enable) signal in a memory read cycle?
Answer: The OE signal, when active, selects the bottom AND gate and enables the tri-state buffers to make data from the selected latches available on the Data In/Out lines.
Chapter: 40
Question 6:
How is data read from memory during a Read Cycle?
Answer: Data is read by maintaining a stable address, activating the CS and OE signals, and then waiting for data to appear on the data lines after a specified delay known as tGQ.
Chapter: 40
Question 7:
What does the Write Cycle timing diagram illustrate?
Answer: It illustrates the sequence of signals needed to write data into memory, including address signals, activation of CS and WE, and the timing of data application and signal validity.
Chapter: 40
Question 8:
How does Synchronous SRAM differ from Asynchronous SRAM in terms of operation?
Answer: Synchronous SRAM uses a clock signal to synchronize read/write operations, while Asynchronous SRAM operates independently of the clock, making Synchronous SRAM generally faster.
Chapter: 40
Question 9:
What are the two variations of Synchronous SRAM mentioned?
Answer: The two variations are Flow-through SRAM, which does not have a Data Output Register, and Pipelined SRAM, which includes a Data Output Register for latched data readout.
Chapter: 40
Question 10:
What is the primary advantage of Burst Logic in Synchronous SRAM?
Answer: Burst Logic allows the SRAM to read or write up to four locations with a single address by generating sequential addresses internally, which speeds up consecutive memory operations.